1. A Bipolar Junction Transistor (BJT) is made up of how many layers of semiconductor material?
A. Two
B. Three
C. Four
D. Five
Answer: B. Three
2. In a BJT, the region between the base and emitter is called the:
A. Collector
B. Base
C. Emitter
D. Junction
Answer: B. Base
3. In a BJT, the current that flows from the collector to the emitter is called the:
A. Base current
B. Collector current
C. Emitter current
D. Saturation current
Answer: B. Collector current
4. In an NPN transistor, current flows from the:
A. Base to emitter
B. Emitter to collector
C. Collector to emitter
D. Base to collector
Answer: C. Collector to emitter
5. Which of the following is true for a transistor in active mode?
A. The base-emitter junction is forward biased, and the collector-base junction is reverse biased.
B. The base-emitter junction is reverse biased, and the collector-base junction is forward biased.
C. Both junctions are forward biased.
D. Both junctions are reverse biased.
Answer: A. The base-emitter junction is forward biased, and the collector-base junction is reverse biased.
6. A Field Effect Transistor (FET) controls current flow by:
A. Using the voltage between the base and emitter
B. Using the voltage between the gate and source
C. Using the current between the collector and emitter
D. None of the above
Answer: B. Using the voltage between the gate and source
7. Which of the following is true for a FET?
A. It is a current-controlled device.
B. It is a voltage-controlled device.
C. It requires both base current and emitter current to operate.
D. It operates in an active region like a BJT.
Answer: B. It is a voltage-controlled device.
8. The three terminals of a FET are:
A. Gate, base, and emitter
B. Source, gate, and drain
C. Collector, base, and emitter
D. Source, collector, and base
Answer: B. Source, gate, and drain
9. In a FET, the current between the drain and source is controlled by:
A. The voltage between the base and emitter
B. The voltage between the gate and source
C. The current between the collector and emitter
D. The resistance of the drain
Answer: B. The voltage between the gate and source
10. Which of the following FETs is primarily used for low-power and high-speed switching applications?
A. JFET
B. MOSFET
C. P-Channel FET
D. N-Channel FET
Answer: B. MOSFET
11. MOSFETs are widely used in:
A. Amplifiers
B. Digital circuits
C. Power electronics
D. All of the above
Answer: D. All of the above
12. Which of the following is the main characteristic of a MOSFET?
A. It has high input impedance.
B. It requires a base current to operate.
C. It is a current-controlled device.
D. It has low output impedance.
Answer: A. It has high input impedance.
13. In an N-channel MOSFET, the current flows from the:
A. Drain to source
B. Source to drain
C. Gate to drain
D. Source to gate
Answer: B. Source to drain
14. The major advantage of MOSFETs over BJTs is:
A. Higher switching speed and lower power consumption
B. Higher current capacity
C. Better linearity in amplification
D. Higher voltage tolerance
Answer: A. Higher switching speed and lower power consumption
15. Which of the following is true for a P-channel MOSFET?
A. The source terminal is positive, and the drain terminal is negative.
B. The current flows from the source to the drain when the gate voltage is positive.
C. The current flows from the drain to the source when the gate voltage is negative.
D. It can only operate in an N-channel configuration.
Answer: C. The current flows from the drain to the source when the gate voltage is negative.