Semiconductor Devices MCQs

50 min Score: 0 Attempted: 0/50

1. What is the majority charge carrier in an N-type semiconductor?
(A) Electrons
(B) Holes
(C) Ions
(D) Protons

2. Which of the following is a P-N junction diode?
(A) LED
(B) FET
(C) BJT
(D) Zener diode

3. The process of adding impurities to a semiconductor to increase its conductivity is called:
(A) Purification
(B) Doping
(C) Polishing
(D) Refining

4. A Zener diode operates in:
(A) Forward bias
(B) Reverse bias
(C) Cut-off region
(D) Saturation region

5. The breakdown in a Zener diode occurs due to:
(A) Forward bias
(B) Thermal effect
(C) Voltage reversal
(D) Avalanche effect

6. A Schottky diode is known for:
(A) High reverse leakage current
(B) High breakdown voltage
(C) Low forward voltage drop
(D) Low temperature coefficient

7. Which semiconductor device has a negative resistance characteristic?
(A) Bipolar Junction Transistor (BJT)
(B) Tunnel diode
(C) Schottky diode
(D) Varactor diode

8. The term ‘mobility’ in semiconductor physics refers to:
(A) Ease of doping
(B) Rate of electron-hole recombination
(C) Temperature coefficient of resistance
(D) Ability of charge carriers to move in response to an electric field

9. Which of the following devices can amplify signals?
(A) Zener diode
(B) BJT
(C) LED
(D) Varactor diode

10. In a JFET, the channel conductivity is controlled by:
(A) Gate-source voltage
(B) Drain-source voltage
(C) Drain-gate voltage
(D) Gate-drain voltage

11. A thyristor is commonly used as:
(A) Rectifier
(B) Voltage regulator
(C) Oscillator
(D) Switch

12. Which of the following is NOT a type of thyristor?
(A) Triac
(B) BJT
(C) SCR
(D) Diac

13. Which material is commonly used as a semiconductor in solar cells?
(A) Copper
(B) Silicon
(C) Aluminum
(D) Silver

14. The term ‘bandgap’ in semiconductors refers to:
(A) The energy difference between the valence band and the conduction band
(B) The energy difference between N-type and P-type regions
(C) The energy difference between electrons and holes
(D) The energy difference between forward and reverse biasing

15. A photodiode is used for converting:
(A) Current into light
(B) Light into current
(C) Voltage into current
(D) Voltage into light

16. Which of the following is a passive semiconductor component?
(A) Diode
(B) Capacitor
(C) Transistor
(D) Thyristor

17. In an NPN transistor, the majority carriers in the base region are:
(A) Electrons
(B) Holes
(C) Ions
(D) Protons

18. The reverse breakdown voltage of a Zener diode is mainly dependent on:
(A) Forward current
(B) Reverse current
(C) Junction temperature
(D) Dopant concentration

19. A Varactor diode is primarily used for:
(A) Rectification
(B) Amplification
(C) Voltage regulation
(D) Voltage-controlled capacitance

20. Which of the following is an application of a tunnel diode?
(A) Power rectification
(B) Voltage regulation
(C) High-frequency oscillation
(D) Current amplification

21. The process of forming a P-N junction by diffusion is called:
(A) Bonding
(B) Ionization
(C) Oxidation
(D) Alloying

22. Which of the following diodes is used in voltage regulators?
(A) Tunnel diode
(B) Schottky diode
(C) LED
(D) Zener diode

23. A thyristor remains in the conducting state until:
(A) The anode current is zero
(B) The gate voltage is applied
(C) The gate voltage is removed
(D) The anode current exceeds a threshold

24. The primary purpose of a transistor in electronic circuits is to:
(A) Store charge
(B) Control current
(C) Generate light
(D) Store energy

25. Which semiconductor device is used for signal switching and amplification?
(A) BJT
(B) Photodiode
(C) Varactor diode
(D) Thyristor

26. The depletion region in a P-N junction contains:
(A) Free electrons
(B) Negative ions
(C) Positive ions
(D) Holes

27. Which diode is used for rectification purposes?
(A) Zener diode
(B) Tunnel diode
(C) Schottky diode
(D) LED

28. A JFET has a channel that is:
(A) N-type
(B) P-type
(C) Intrinsic
(D) Extrinsic

29. Which of the following devices has three terminals?
(A) Diode
(B) SCR
(C) Tunnel diode
(D) Photodiode

30. A MOSFET is primarily used for:
(A) Voltage regulation
(B) High-frequency oscillation
(C) Switching applications
(D) Signal amplification

31. The breakdown voltage of a diode is approximately:
(A) 0.3V
(B) 1.5V
(C) 1.1V
(D) 0.7V

32. Which semiconductor device has a negative temperature coefficient of resistance?
(A) Thermistor
(B) Zener diode
(C) Schottky diode
(D) Photodiode

33. The term ‘cut-off’ in a semiconductor device refers to:
(A) The maximum current rating
(B) The condition when the device is not conducting
(C) The breakdown voltage
(D) The reverse bias condition

34. A photovoltaic cell converts:
(A) Light into heat
(B) Heat into electricity
(C) Light into electricity
(D) Electricity into light

35. Which diode has the fastest switching speed?
(A) Tunnel diode
(B) Schottky diode
(C) LED
(D) Zener diode

36. Which of the following is a characteristic of a Schottky diode?
(A) High reverse leakage current
(B) High breakdown voltage
(C) High forward voltage drop
(D) Low temperature coefficient

37. In a P-type semiconductor, the majority charge carriers are:
(A) Holes
(B) Electrons
(C) Ions
(D) Protons

38. Which semiconductor device is commonly used as a rectifier?
(A) BJT
(B) Diode
(C) FET
(D) SCR

39. The gate of a MOSFET is made of:
(A) P-type semiconductor
(B) Metal
(C) N-type semiconductor
(D) Silicon dioxide

40. Which of the following is NOT a type of diode?
(A) Zener diode
(B) Tunnel diode
(C) FET
(D) LED

41. A bipolar junction transistor consists of:
(A) One P-type and two N-type layers
(B) Two N-type and one P-type layers
(C) One P-type and one N-type layer
(D) Two P-type and one N-type layers

42. The reverse leakage current in a diode primarily depends on:
(A) Forward voltage
(B) Reverse voltage
(C) Light intensity
(D) Temperature

43. A Zener diode is used primarily for:
(A) Rectification
(B) Amplification
(C) Current control
(D) Voltage regulation

44. Which of the following is a characteristic of an LED?
(A) Negative resistance
(B) High reverse leakage current
(C) High breakdown voltage
(D) Low forward voltage drop

45. The current gain in a BJT is denoted by:
(A) β
(B) α
(C) γ
(D) δ

46. A Varactor diode is used primarily in:
(A) Power supplies
(B) Oscillators
(C) Voltage regulators
(D) Switching circuits

47. Which semiconductor device has the highest input impedance?
(A) BJT
(B) Thyristor
(C) Diode
(D) FET

48. A diode operates as an open circuit in which biasing condition?
(A) Forward bias
(B) Zero bias
(C) Reverse bias
(D) Cut-off bias

49. The threshold voltage of a MOSFET refers to:
(A) The voltage above which the device conducts
(B) The voltage below which the device does not conduct
(C) The voltage at which breakdown occurs
(D) The voltage at which reverse biasing occurs

50. Which of the following devices is used for switching high-power circuits?
(A) SCR
(B) Diode
(C) Varactor diode
(D) Photodiode

Leave a Comment Cancel reply