Semiconductor Devices MCQs

1. What is the majority charge carrier in an N-type semiconductor? A. Holes B. Electrons C. Ions D. Protons Answer: B. Electrons 2. Which of the following is a P-N junction diode? A. BJT B. FET C. LED D. Zener diode Answer: C. LED 3. The process of adding impurities to a semiconductor to increase its conductivity is called: A. Purification B. Doping C. Polishing D. Refining Answer: B. Doping 4. A Zener diode operates in: A. Forward bias B. Reverse bias C. Cut-off region D. Saturation region Answer: B. Reverse bias 5. The breakdown in a Zener diode occurs due to: A. Avalanche effect B. Thermal effect C. Voltage reversal D. Forward bias Answer: A. Avalanche effect 6. A Schottky diode is known for: A. High reverse leakage current B. Low forward voltage drop C. High breakdown voltage D. Low temperature coefficient Answer: B. Low forward voltage drop 7. Which semiconductor device has a negative resistance characteristic? A. Bipolar Junction Transistor (BJT) B. Schottky diode C. Tunnel diode D. Varactor diode Answer: C. Tunnel diode 8. The term ‘mobility’ in semiconductor physics refers to: A. Ease of doping B. Rate of electron-hole recombination C. Ability of charge carriers to move in response to an electric field D. Temperature coefficient of resistance Answer: C. Ability of charge carriers to move in response to an electric field 9. Which of the following devices can amplify signals? A. Zener diode B. LED C. BJT D. Varactor diode Answer: C. BJT 10. In a JFET, the channel conductivity is controlled by: A. Gate-source voltage B. Drain-source voltage C. Drain-gate voltage D. Gate-drain voltage Answer: A. Gate-source voltage 11. A thyristor is commonly used as: A. Rectifier B. Voltage regulator C. Switch D. Oscillator Answer: C. Switch 12. Which of the following is NOT a type of thyristor? A. Triac B. Diac C. SCR D. BJT Answer: D. BJT 13. Which material is commonly used as a semiconductor in solar cells? A. Silicon B. Copper C. Aluminum D. Silver Answer: A. Silicon 14. The term ‘bandgap’ in semiconductors refers to: A. The energy difference between the valence band and the conduction band B. The energy difference between N-type and P-type regions C. The energy difference between electrons and holes D. The energy difference between forward and reverse biasing Answer: A. The energy difference between the valence band and the conduction band 15. A photodiode is used for converting: A. Light into current B. Current into light C. Voltage into current D. Voltage into light Answer: A. Light into current 16. Which of the following is a passive semiconductor component? A. Diode B. Transistor C. Capacitor D. Thyristor Answer: C. Capacitor 17. In an NPN transistor, the majority carriers in the base region are: A. Holes B. Electrons C. Ions D. Protons Answer: A. Holes 18. The reverse breakdown voltage of a Zener diode is mainly dependent on: A. Forward current B. Reverse current C. Junction temperature D. Dopant concentration Answer: D. Dopant concentration 19. A Varactor diode is primarily used for: A. Rectification B. Amplification C. Voltage-controlled capacitance D. Voltage regulation Answer: C. Voltage-controlled capacitance 20. Which of the following is an application of a tunnel diode? A. Power rectification B. High-frequency oscillation C. Voltage regulation D. Current amplification Answer: B. High-frequency oscillation 21. The process of forming a P-N junction by diffusion is called: A. Bonding B. Oxidation C. Ionization D. Alloying Answer: B. Oxidation 22. Which of the following diodes is used in voltage regulators? A. Zener diode B. Schottky diode C. LED D. Tunnel diode Answer: A. Zener diode 23. A thyristor remains in the conducting state until: A. The gate voltage is applied B. The anode current is zero C. The gate voltage is removed D. The anode current exceeds a threshold Answer: B. The anode current is zero 24. The primary purpose of a transistor in electronic circuits is to: A. Control current B. Store charge C. Generate light D. Store energy Answer: A. Control current 25. Which semiconductor device is used for signal switching and amplification? A. Photodiode B. BJT C. Varactor diode D. Thyristor Answer: B. BJT 26. The depletion region in a P-N junction contains: A. Free electrons B. Positive ions C. Negative ions D. Holes Answer: C. Negative ions 27. Which diode is used for rectification purposes? A. Zener diode B. Tunnel diode C. Schottky diode D. LED Answer: C. Schottky diode 28. A JFET has a channel that is: A. P-type B. N-type C. Intrinsic D. Extrinsic Answer: B. N-type 29. Which of the following devices has three terminals? A. Diode B. SCR C. Tunnel diode D. Photodiode Answer: B. SCR 30. A MOSFET is primarily used for: A. Voltage regulation B. High-frequency oscillation C. Signal amplification D. Switching applications Answer: D. Switching applications 31. The breakdown voltage of a diode is approximately: A. 0.3V B. 0.7V C. 1.1V D. 1.5V Answer: B. 0.7V 32. Which semiconductor device has a negative temperature coefficient of resistance? A. Zener diode B. Thermistor C. Schottky diode D. Photodiode Answer: B. Thermistor 33. The term ‘cut-off’ in a semiconductor device refers to: A. The condition when the device is not conducting B. The maximum current rating C. The breakdown voltage D. The reverse bias condition Answer: A. The condition when the device is not conducting 34. A photovoltaic cell converts: A. Light into heat B. Light into electricity C. Heat into electricity D. Electricity into light Answer: B. Light into electricity 35. Which diode has the fastest switching speed? A. Zener diode B. Schottky diode C. LED D. Tunnel diode Answer: D. Tunnel diode 36. Which of the following is a characteristic of a Schottky diode? A. High reverse leakage current B. High forward voltage drop C. High breakdown voltage D. Low temperature coefficient Answer: B. High forward voltage drop 37. In a P-type semiconductor, the majority charge carriers are: A. Electrons B. Holes C. Ions D. Protons Answer: B. Holes 38. Which semiconductor device is commonly used as a rectifier? A. BJT B. FET C. Diode D. SCR Answer: C. Diode 39. The gate of a MOSFET is made of: A. P-type semiconductor B. N-type semiconductor C. Metal D. Silicon dioxide Answer: C. Metal 40. Which of the following is NOT a type of diode? A. Zener diode B. Tunnel diode C. FET D. LED Answer: C. FET 41. A bipolar junction transistor consists of: A. One P-type and two N-type layers B. Two P-type and one N-type layers C. One P-type and one N-type layer D. Two N-type and one P-type layers Answer: B. Two P-type and one N-type layers 42. The reverse leakage current in a diode primarily depends on: A. Forward voltage B. Reverse voltage C. Temperature D. Light intensity Answer: C. Temperature 43. A Zener diode is used primarily for: A. Rectification B. Amplification C. Voltage regulation D. Current control Answer: C. Voltage regulation 44. Which of the following is a characteristic of an LED? A. Low forward voltage drop B. High reverse leakage current C. High breakdown voltage D. Negative resistance Answer: A. Low forward voltage drop 45. The current gain in a BJT is denoted by: A. β B. α C. γ D. δ Answer: A. β 46. A Varactor diode is used primarily in: A. Power supplies B. Oscillators C. Voltage regulators D. Switching circuits Answer: B. Oscillators 47. Which semiconductor device has the highest input impedance? A. BJT B. FET C. Diode D. Thyristor Answer: B. FET 48. A diode operates as an open circuit in which biasing condition? A. Forward bias B. Reverse bias C. Zero bias D. Cut-off bias Answer: B. Reverse bias 49. The threshold voltage of a MOSFET refers to: A. The voltage below which the device does not conduct B. The voltage above which the device conducts C. The voltage at which breakdown occurs D. The voltage at which reverse biasing occurs Answer: A. The voltage below which the device does not conduct 50. Which of the following devices is used for switching high-power circuits? A. Diode B. SCR C. Varactor diode D. Photodiode Answer: B. SCR

Semiconductor Devices MCQs

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